PART |
Description |
Maker |
STS7103 |
Infrared LED, 3.9 mm, 1 ELEMENT, INFRARED LED, 950 nm, HERMETIC SEALED, TO-18, 2 PIN
|
Vishay Semiconductors
|
LNA2901L |
GaAs Infrared Light Emitting Diode 5 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
LED55BF LED55CF LED56F |
GAAS INFRARED EMITTIN DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
1N6266 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
OED-EL-1L2 |
5 mm, 1 ELEMENT, INFRARED LED, 940 nm LEAD FREE PACKAGE-2 T-5mm, 940mm INFRARED EMITTING DIODE
|
Lumex, Inc. LUMEX INC.
|
TLN105B |
TOSHIBA INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
TLN201 |
INFRARED LED GAA AS INFRARED ENITTER
|
Toshiba Corporation Toshiba Semiconductor
|
TLN11007 TLN110F |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Semiconductor
|
SIR91-21C |
.9mm Round Subminiature “Z-BendLead Infrared LED 0.9毫米回合微型的“Z -弯”铅红外发光二极 .9mm Round Subminiature “Z-Bend” Lead Infrared LED .9mm Round Subminiature “Z-Bend Lead Infrared LED
|
Everlight Electronic Co., Ltd. Everlight Electronics Co., Ltd
|
BIR-BO18V4V-2 BIR-BO18E4G-2 BIR-BN08E4G-2 |
4.98 mm, 1 ELEMENT, INFRARED LED, 850 nm 5 mm, 1 ELEMENT, INFRARED LED, 850 nm 5 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
American Bright Optoelectronics, Corp. AMERICAN BRIGHT OPTOELECTRONICS CORP
|
BIR-BO13E4G-2 BIR-BO13V4V-2 BIR-BN03V4V-2 BIR-BO03 |
5 mm, 1 ELEMENT, INFRARED LED, 850 nm 4.98 mm, 1 ELEMENT, INFRARED LED, 850 nm 4.98 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
American Bright Optoelectronics, Corp. AMERICAN BRIGHT OPTOELECTRONICS CORP
|
|